MRF6S9125NBR1 |
RFQ for MRF6S9125NBR1 Required Field |
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| Technical/Catalog Information | MRF6S9125NBR1 |
| Vendor | Freescale Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | TO-272-4 |
| FET Type | N-Channel |
| Typical RF Application | CDMA |
| Typical RF Application | TDMA |
| Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
| Power Dissipation | 27.000 W [Max] |
| Packaging | Tape & Reel, 13" |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6S9125NBR1 MRF6S9125NBR1 |
| Product | Manufacturers | Pack | D/C |
| MRF6S9125NBR1 | - | - | 07+ |
Typical Application |
| N-CDMA Application• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =950 mA, Pout = 27 Watt Avg., Full Frequency Band (865-895 MHz), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain- 20.2 dB Drain Efficiency- 31% ACPR @ 750 kHz Offset = -47.1 dBc @ 30 kHz BandwidthGSM EDGE Application• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,Pout = 60 Watts Avg., Full Frequency Band (865-895 MHz or 921-960 MHz) Power Gain- 20 dB Drain Efficiency - 40% (Typ) Spectral Regrowth @ 400 kHz Offset = -63 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM-1.5% rmsGSM Application• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =125 Watts, Full Frequency Band (921-960 MHz) Power Gain - 19 dB Drain Efficiency - 62%• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,@ f = 880 MHz• Characterized with Series Equivalent Large-Signal Impedance Parameters• Internally Matched for Ease of Use• Qualified Up to a Maximum of 32 VDD Operation• Integrated ESD Protection• N Suffix Indicates Lead-Free Terminations• 200°C Capable Plastic Package• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. |
|
Rating |
Symbol |
Value |
Unit |
| Drain−Source Voltage |
VDSS |
−0.5, +68 |
Vdc |
| Gate−Source Voltage |
VGS |
−0.5, +12 |
Vdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
398 2.3 |
W W/°C |
| Storage Temperature Range |
Tstg |
−65 to +150 |
°C |
| Operating Junction Temperature |
TJ |
200 |
°C |
